OHNO Yutaka

A focus is on quantitative analyses of the impurity segregation ability of GBs in semiconductors by atom probe tomography (with an impurity detection limit less than 0.005 at.% on a GB simultaneously with a spatial resolution less than 0.4 nm) combined with attomic-resolution STEM and ab-initio calculations, but also the study of atomistic structures of semiconductor nanostructures by in-situ optical measurements (CL, PL, SNOM) under TEM.

Last update: 2022.05.16
カウンター since 2007
Date of birth: 7th December, 1966
Position 1992-2006 Assistant Professor
　Graduate School of Science, Osaka University
2007-2021 Associate Professor
2022- Specially Appointed Associate Professor 　Institute for Materials Research, Tohoku University
Education 1990-1992 Master, Engineering Science
　Faculty of Engineering Science, Osaka University
Degree 1998 PhD Science
　Osaka University, Japan
Field of Specialization Nanofunctions of semiconductor nanostructures & defects, Transmission electron microscopy (TEM)
Research Keywords Lattice defects, Semiconductors, Opto-TEM
Research activity
  1. Publication
  2. Invited talk
  3. Presentation (International) (Internal)
  4. Research funds (Japanese page)
Membership
  1. Materials Research Society
  2. European Materials Research Society
  3. The Physical Society of Japan
  4. The Japan Society of Applied Physics
  5. The Japanese Society of Microscopy
  6. Institute for Advanced Micro-system Integration
Collaboration Collaborating
  1. Fujiwara group@Tohoku Univ.
  2. Nagai group@Tohoku Univ.
  3. Shigekawa group@Osaka City Univ.
  4. Sumitomo Metal Mining Co., LTD
  5. Tanaka group@AIST
  6. Usami group@Nagoya Univ.
  7. Dr. Yokoi@Nagoya Univ.
  8. Dr. Yoshida@Osaka Univ.
Collaborated
Address:
Institute for Materials Research, Tohoku University
Narita 2145-2, Oarai, Ibaraki 311-1313, Japan
Tel: (+81) 29-267-3181　Fax: (+81) 29-267-4947
E-mail: yutaka.ohno.e6@tohoku.ac.jp