A focus is on quantitative analyses of the impurity segregation ability of GBs in semiconductors by atom probe tomography (with an impurity detection limit less than 0.005 at.% on a GB simultaneously with a spatial resolution less than 0.4 nm) combined with attomic-resolution STEM and ab-initio calculations, but also the study of atomistic structures of semiconductor nanostructures by in-situ optical measurements (CL, PL, SNOM) under TEM.
Last update: 2022.05.16 since 2007
Date of birth:
7th December, 1966
Position
1992-2006 Assistant Professor
Graduate School of Science, Osaka University
2007-2021 Associate Professor
2022- Specially Appointed Associate Professor
Institute for Materials Research, Tohoku University
Education
1990-1992 Master, Engineering Science
Faculty of Engineering Science, Osaka University
Degree
1998 PhD Science
Osaka University, Japan
Field of Specialization
Nanofunctions of semiconductor nanostructures & defects, Transmission electron microscopy (TEM)